Effect of interface states on conversion efficiency of non-uniformly doped MIS solar cell

A comprehensive numerical model is prepared to simulate the performance of a MIS solar cell with nonuniform substrate doping profile. The effect of interface states properties on the device conversion efficiency are simulated and investigated by computing the J–V characteristics under dark and illumination conditions. Also the effect of some important device parameters such as insulator thickness, doping profile, and fixed insulator charge are quantitatively investigated.

a c b Terminal voltage, V Fig. 8. Illuminated J–V characteristics of the device at different interface state densities: (a) ideal case, (b) Nt = 1 × 1015 and (c) Nt = 1 × 1016.